Coronavirus and changing conditions for crime

A short blog, part of the Discover Society rapid response to Covid 19

Optical Technologies for UV Remote Sensing Instruments

Over the last decade significant advances in technology have made possible development of instruments with substantially improved efficiency in the UV spectral region. In the area of optical coatings and materials, the importance of recent developments in chemical vapor deposited (CVD) silicon carbide (SiC) mirrors, SiC films, and multilayer coatings in the context of ultraviolet instrumentation design are discussed. For example, the development of chemically vapor deposited (CVD) silicon carbide (SiC) mirrors, with high ultraviolet (UV) reflectance and low scatter surfaces, provides the opportunity to extend higher spectral/spatial resolution capability into the 50-nm region. Optical coatings for normal incidence diffraction gratings are particularly important for the evolution of efficient extreme ultraviolet (EUV) spectrographs. SiC films are important for optimizing the spectrograph performance in the 90 nm spectral region. The performance evaluation of the flight optical components for the Solar Ultraviolet Measurements of Emitted Radiation (SUMER) instrument, a spectroscopic instrument to fly aboard the Solar and Heliospheric Observatory (SOHO) mission, designed to study dynamic processes, temperatures, and densities in the plasma of the upper atmosphere of the Sun in the wavelength range from 50 nm to 160 nm, is discussed. The optical components were evaluated for imaging and scatter in the UV. The performance evaluation of SOHO/CDS (Coronal Diagnostic Spectrometer) flight gratings tested for spectral resolution and scatter in the DGEF is reviewed and preliminary results on resolution and scatter testing of Space Telescope Imaging Spectrograph (STIS) technology development diffraction gratings are presented

Where constructionism and critical realism converge: interrogating the domain of epistemological relativism

The paper interrogates the status, nature and significance of epistemological relativism as a key element of constructionism and critical realism. It finds that epistemological relativism is espoused by authorities in critical realism and marginalized or displaced in the field of management and organization studies, resulting in forms of analysis that are empirically, but not fully critically, realist. This evaluation prompts reflection on the question of whether, how and with what implications epistemological relativism might be recast at the heart of critical realist studies of management and organization

Immunity and inflammation in neurodegenerative diseases.

Immune reactions inside the central nervous system are finely regulated, thanks to the presence of several checkpoints that have the fundamental purpose to preserve this fragile tissue form harmful events. The current knowledge on the role of neuroinflammation and neuro-immune interactions in the fields of multiple sclerosis, Alzheimer's disease and Parkinson's disease is reviewed. Moreover, a focus on the potential role of both active and passive immunotherapy is provided. Finally, we propose a common perspective, which implies that, under pathological conditions, inflammation may exert both detrimental and protective functions, depending on local factors and the timing of immune activation and shutting-off systems

Peripheral nervous system involvement in Parkinson's disease: Evidence and controversies

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The 4-H colt club

February, 1936."Cooperative Extension Work in Agriculture and Home Economics, University of Missouri, College of Agriculture and the United States Department of Agriculture Cooperating."Title from cover

A first-principles approach to closing the "10-100 eV gap" for charge-carrier thermalization in semiconductors

The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiation in wurtzite GaN, using an ab initio approach. Current physical models of the nuclear/particle physics community cover thermalization in the high-energy range (kinetic energies exceeding ~100 eV), and the electronic-device community has studied extensively carrier transport in the low-energy range (below ~10 eV). However, the processes that control the energy losses and thermalization of electrons and holes in the intermediate energy range of about 10-100 eV (the "10-100 eV gap") are poorly known. The aim of this research is to close this gap, by utilizing density functional theory (DFT) to obtain the band structure and dielectric function of GaN for energies up to about 100 eV. We also calculate charge-carrier scattering rates for the major charge-carrier interactions (phonon scattering, impact ionization, and plasmon emission), using the DFT results and first-order perturbation theory. With this information, we study the thermalization of electrons starting at 100 eV using the Monte Carlo method to solve the semiclassical Boltzmann transport equation. Full thermalization of electrons and holes is complete within ~1 and 0.5 ps, respectively. Hot electrons dissipate about 90% of their initial kinetic energy to the electron-hole gas (90 eV) during the first ~0.1 fs, due to rapid plasmon emission and impact ionization at high energies. The remaining energy is lost more slowly as phonon emission dominates at lower energies (below ~10 eV). During the thermalization, hot electrons generate pairs with an average energy of ~8.9 eV/pair (11-12 pairs per hot electron). Additionally, during the thermalization, the maximum electron displacement from its original position is found to be on the order of 100 nm.Comment: 23 pages, 20 figures. This LaTex file uses RevTex4.2 from AP